GaN MOSFET foundry process
Semiconductor process
A MOSFET-based GaN-on-SiC foundry process enabling fabrication of transistors and MMICs, which the company says offers significant benefits over existing GaN HEMT technology.
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TransEON
Semiconductors & PhotonicsEdmonton, AB
Edmonton semiconductor startup commercializing a MOSFET-based GaN-on-SiC foundry process for RF transistors and monolithic microwave integrated circuits, with a fab line for rapid prototyping down to 40 nm gate length.
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About
Source: transeon.caTransEON states that it was "Founded in 2019" and that its "mission is to revolutionize GaN technology". The company says its team "developed a new MOS-based process that enables fabrication of cutting-edge integrated circuits with significant benefits over existing GaN HEMT technology", and that it runs "a fab line capable of rapid prototyping of cutting-edge devices down to 40 nm gate length". Its own IMS press release describes the resulting GaN MOSFET process as supporting transistors and MMICs with through-substrate vias, integrated passives and gold-plated microstrip on thinned silicon carbide, offered with multi-project wafer access and both ITAR and ITAR-free process flows.
Announced the GaN MOSFET, a MOSFET-based GaN-on-SiC foundry process, unveiled at IMS2024 in Washington, D.C. and described as the first commercial platform of its kind. microwavejournal.com
Claims up to 4x higher operating voltage and RF power density than existing GaN HEMT technology, at frequencies from HF up to W-band. ims-ieee.org
Its process includes through-substrate vias, integrated passives and gold-plated microstrip on thinned SiC, with ITAR and ITAR-free options and multi-project wafer access. ims-ieee.org
States it operates a fab line capable of rapid prototyping of devices down to 40 nm gate length, with first multi-project wafer runs scheduled for Q4 2026. transeon.ca
Products & Services
Company site: transeon.caProducts TransEON publishes on its own site. Each card links to the page it was taken from.
Multi-project wafer runs
Foundry service
Shared wafer runs giving customers access to the GaN MOSFET process, with the first run stated as scheduled for Q4 2026.
Learn moreRecent News
- Jun 3, 2024Product
TransEON Announces the GaN MOSFET
TransEON announced a MOSFET-based GaN-on-SiC foundry process for fabricating transistors and MMICs, formally unveiled at IMS2024 in Washington, D.C. The company claims up to 4x higher operating voltage and RF power density than GaN HEMT technology.
Technology Focus
Company site: transeon.caTerms the company uses about its own work.
GaNGaN-on-SiCGaN MOSFETMMICHEMTThrough-substrate vias40 nm gate lengthMulti-project wafer (MPW)
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